US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Method for forming source/drain contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,346, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method for forming source/drain contacts" was invented by Shao-Ming Koh (Hsinchu City, Taiwan), Chen-Ming Lee (Taoyuan County, Taiwan), Fu-Kai Yang (Hsinchu City, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor in a first region of a first conductivity type and a second transistor in a second region of a second conductivity type opposite to the first conductivity type. The first transistor includes a first gate stack, a first epitaxial feature in a source/...