US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Epitaxial features in semiconductor devices and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,330, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Epitaxial features in semiconductor devices and manufacturing method thereof" was invented by Chun-Fai Cheng (Hong Kong, Taiwan), Chang-Miao Liu (Hsinchu City, Taiwan) and Ming-Lung Cheng (Kaohsiung County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin protruding from a substrate, forming a dummy gate structure across the semiconductor fin, recessing the semiconductor fin in a region adjacent the dummy gate structure to form a recess, growing an epitaxial feature in the recess to fully cove...