US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 30 for "Deep trench isolation structure and methods for fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,377, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Deep trench isolation structure and methods for fabrication thereof" was invented by Kai-Yun Yang (Tainan, Taiwan) and Yu-Jen Wang (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Deep Trench Isolation (DTI) structure is disclosed. A DTI structure formed in a semiconductor substrate. The DIT structure includes an isolation layer and filling material. The isolation layer is formed from a p-type semiconductor material. Sidewall portions of the isolation layer are in contact with the semiconductor substrate. A bottom portion of...