US Patent Issued to Taiwan Semiconductor Manufacturing on June 30 for "Complementary field effect transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,534, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Complementary field effect transistor" was invented by Chun-Yen Lin (Hsinchu, Taiwan), Shih-Wei Peng (Hsinchu, Taiwan), Wei-Cheng Lin (Hsinchu, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IC device in some embodiments includes a first conductive line in a first conductive layer disposed in a first plane, a second conductive line in a second conductive player disposed in a second plane, and a conductor connecting first and second conductive lines, the conductor including a conductive wall disposed...