ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,578, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Cap layer for pad oxidation prevention" was invented by Harry-Haklay Chuang (Zhubei City, Taiwan), Wei-Cheng Wu (Zhubei City, Taiwan) and Chih-Peng Tsai (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a semiconductor structure (e.g., an integrated circuit (IC) die) comprising an enhanced cap layer for pad oxidation prevention, as well as a method for forming the IC die. An interconnect pad overlies a substrate at a top of an interconnect structure, and a bon...