US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Spacer structure for semiconductor device" (Taiwanese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,209, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Spacer structure for semiconductor device" was invented by Yi-Chen Lo (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, a first inner spacer layer formed in the fin structure and adjacent to the gate structure, and a second inner spacer layer extending through the first inner spacer layer."

The patent was filed on A...