ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,220, issued on June 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and method for manufacturing the same" was invented by Sung-Li Wang (Hsinchu County, Taiwan), Peng-Wei Chu (Hsinchu, Taiwan) and Yasutoshi Okuno (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the firs...