US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Metal-insulator-metal device with improved performance" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,694, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metal-insulator-metal device with improved performance" was invented by Min-Feng Kao (Chiayi, Taiwan), Dun-Nian Yaung (Taipei, Taiwan), Jen-Cheng Liu (Hsin-Chu, Taiwan), Hsing-Chih Lin (Tainan, Taiwan) and Kuan-Hua Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first inter-metal dielectric (IMD) structure disposed over a semiconductor substrate. A metal-insulator-metal (MIM) device is disposed over the first IMD struc...