ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,649, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Interconnect structure of semiconductor device" was invented by Yao-Min Liu (Taipei, Taiwan), Chia-Pang Kuo (Taoyuan, Taiwan), Shu-Cheng Chin (Hsinchu, Taiwan), Chih-Chien Chi (Hsinchu, Taiwan), Cheng-Hui Weng (Hsinchu, Taiwan), Hung-Wen Su (Jhubei, Taiwan) and Ming-Hsing Tsai (Chu-Pei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first conductive feature in a first dielectric layer. A second dielectric layer is formed over the first conductive feature and the first dielectric layer. An opening is formed in the s...