US Patent Issued to Taiwan Semiconductor Manufacturing on June 3 for "Field effect transistor with source/drain contact isolation structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,188, issued on June 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with source/drain contact isolation structure and method" was invented by Meng-Huan Jao (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Sheng-Tsung Wang (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Cheng-Chi Chuang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate and a gate structure wrapping around at least one vertical stack of nanostructure channels. The device includes a source/drain region abutting the gate structure, and a source/...