US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Triple layer high-k gate dielectric stack for workfunction engineering" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,685, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Triple layer high-k gate dielectric stack for workfunction engineering" was invented by Chia-Yuan Chang (Hsinchu, Taiwan), Te-Yang Lai (Hsinchu, Taiwan), Kuei-Lun Lin (Hsinchu, Taiwan), Xiong-Fei Yu (Hsinchu, Taiwan), Chi On Chui (Hsinchu City, Taiwan), Tsung-Da Lin (Hsinchu, Taiwan) and Cheng-Hao Hou (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing first and second channel layers in NMOS and PMOS regions respectively of a substrate; depositing a first layer comprising hafnium oxide over the first an...