US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Transistors with channels formed of low-dimensional materials and method forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,858, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistors with channels formed of low-dimensional materials and method forming same" was invented by Chao-Ching Cheng (Hsinchu, Taiwan), Tzu-Ang Chao (Hsinchu, Taiwan), Chun-Chieh Lu (Taipei, Taiwan), Hung-Li Chiang (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Lain-Jong Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first ins...