US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor device with reduced leakage" (Japanese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,683, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with reduced leakage" was invented by Motoki Tamura (Kawasaki City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first well and a second well. The first well is configured to operate as a back gate terminal of a first transistor. The second well is separated from the first well, and is configured to operate as a back gate terminal of a second transistor. Each of a first source/drain terminal of the second transistor, and a first source/drain terminal of the first transistor and the...