US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor device that uses bonding layer to join semiconductor substrates together" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,667,000, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device that uses bonding layer to join semiconductor substrates together" was invented by Ming-Fa Chen (Taichung, Taiwan) and Chen-Hua Yu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices are provided in which a first semiconductor device is bonded to a second semiconductor device. The bonding may occur at a gate level, a gate contact level, a first metallization layer, a middle metallization layer, or a top metallization layer of either the first semiconductor device or the second semiconductor de...