ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,666, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device structure and method for forming the same" was invented by Hong-Chih Chen (Changhua County, Taiwan), Chun-Yi Chang (Hsinchu City, Taiwan), Fu-Hsiang Su (Zhubei City, Taiwan) and Shih-Hsun Chang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes first nanostructures and second nanostructures formed over a substrate. The structure also includes gate structures that are wrapped around the first nanostructures and the second nanostructures and that extend along a first dir...