US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Semiconductor device including multi-dimension through silicon via structures for backside alignment and thermal dissipation" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,667,018, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including multi-dimension through silicon via structures for backside alignment and thermal dissipation" was invented by Ke-Gang Wen (Hsinchu, Taiwan), Tsung-Chieh Hsiao (Shetou Township, Taiwan), Liang-Wei Wang (Hsinchu City, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein include systems and techniques for fabricating a multi-dimension through silicon via structure in a three-dimensional integrated circuit device. The multi-dimension through sili...