US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,690, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Kuo-Ju Chen (Taichung City, Taiwan), Te-Jui Yen (Hsinchu City, Taiwan), Liang-Yin Chen (Hsinchu City, Taiwan) and Chi On Chui (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes a number of operations. An interlayer dielectric (ILD) layer is formed over a source/drain region on a substrate. A source/drain contact extending through the ILD layer to electrically connect with the source/drain region is formed. An air gap extending through the...