US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Method of forming semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,932, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming semiconductor device" was invented by Shih-Wei Peng (Hsinchu City, Taiwan), Wei-Cheng Lin (Taichung City, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a wafer having an ion-implanted silicon layer, wherein the ion-implanted silicon layer is disposed between a first insulator layer and a second insulator layer inside the wafer; forming an active region over the ion-implanted silicon layer; forming an active device in the...