US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 23 for "Method for forming semiconductor structure including capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,959, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor structure including capacitor" was invented by Min-Feng Kao (Chiayi City, Taiwan), Dun-Nian Yaung (Taipei City, Taiwan), Hsing-Chih Lin (Tainan City, Taiwan) and Jen-Cheng Liu (Hsin-Chu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first die and a second die. The first die includes a substrate, an interconnection structure and a capacitor structure. The substrate has a front-side surface and a back-side surface. The inte...