US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Memory device and method of forming the same and integrated circuit" (American, Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,627, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of forming the same and integrated circuit" was invented by Sam Vaziri (San Jose, Calif.), Isha Datye (Hsinchu, Taiwan) and Xinyu Bao (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a selector and a memory cell. The selector includes a first electrode layer, a second electrode layer and a selector layer between the first electrode and the second electrode. The selector layer includes a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and alumi...