US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Low-frequency nosie transistors with curved channels" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,640, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low-frequency nosie transistors with curved channels" was invented by Wen-Chao Shen (Hsinchu, Taiwan) and Shih-Chang Chen (Chiayi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes: a substrate; a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a ...