US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Integration of via and bottom electrode for memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,945, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integration of via and bottom electrode for memory cell" was invented by Tzu-Yu Chen (Kaohsiung City, Taiwan), Wen-Ting Chu (Kaohsiung City, Taiwan), Kuo-Chi Tu (Hsin-Chu, Taiwan) and Sheng-Hung Shih (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a method of forming an integrated chip, including forming a first wire level over a substrate; depositing an etch stop layer over the first wire level; etching the etch stop layer to form an opening over the first wire level; depositing a barrier layer over...