ALEXANDRIA, Va., July 15 -- United States Patent no. 12,664,348, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit device and manufacturing method of the same" was invented by Shih-Wei Peng (Hsinchu City, Taiwan), Wei-Cheng Tzeng (Taipei City, Taiwan), Wei-Cheng Lin (Taichung City, Taiwan) and Jiann-Tyng Tzeng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided, including following operations: obtaining information on gate pitch and a ratio between the gate pitch and a first metal line pitch; comparing a preset metal line end spacing with a second metal line pitch, of multiple metal traces, and a spa...