ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,631, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Decoupling FinFET capacitors" was invented by Chung-Hui Chen (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including field-effect transistors (finFETs) and fin capacitors are formed on a silicon substrate. The fin capacitors include silicon fins, one or more electrical conductors between the silicon fins, and insulating material between the silicon fins and the one or more electrical conductors. The fin capacitors may also include insulating material between the one or more electrical conductors an...