US Patent Issued to Taiwan Semiconductor Manufacturing on June 23 for "Anti-fuse cells with backside power rails" (Taiwanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,957, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Anti-fuse cells with backside power rails" was invented by I-Hsin Yang (Hsinchu, Taiwan) and Meng-Sheng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a memory cell including a first transistor and a second transistor disposed on a frontside of a substrate, the substrate having a first area and a second area. The memory device includes a first interconnect structure disposed on a backside of the substrate. One S/D terminal of the first transistor is coupled to one S/D terminal of the second transistor, with...