US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Two-port SRAM cell structure" (Taiwanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,125, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Two-port SRAM cell structure" was invented by Jhon Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit includes a Vdd node, and a two-port Static Random-Access Memory (SRAM) cell pair having a first SRAM cell and a second SRAM cell having a same structure. The first SRAM cell is a ten-transistor SRAM cell that comprises a first pull-up transistor and a second pull-up transistor, a first pull-down transistor and a second pull-down transistor forming a latch with the first pull-up transistor and the second pull-...