US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Semiconductor device including thin film transistor and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,295, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device including thin film transistor and method for forming the same" was invented by Yen-Chung Ho (Hsinchu, Taiwan), Yong-Jie Wu (Tainan City, Taiwan) and Hui-Hsien Wei (Taoyuan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of forming a semiconductor device. The method includes: forming an interconnect structure over a substrate; forming a first gate structure and a second gate structure in a first layer of the interconnect structure; forming a first metal oxide layer and a...