US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Semiconductor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,292, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of forming the same" was invented by Hsin-Yi Lee (Hsinchu City, Taiwan), Cheng-Lung Hung (Hsinchu City, Taiwan), Weng Chang (Hsin-Chu, Taiwan) and Chi-On Chui (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate strip disposed over the substrate. The gate strip includes a high-k layer disposed over the substrate, an N-type work function metal layer disp...