US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Low power scheme for power down in integrated dual rail SRAMs" (Canadian Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,658,221, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Low power scheme for power down in integrated dual rail SRAMs" was invented by Sanjeev Kumar Jain (Ottawa).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods are provided for controlling power down of an integrated dual rail memory circuit. The power down system is configured to power down the power rail for input and logic components (VDD) while maintaining power to the power rail for the memory cells (VDDM). The power down system includes two voltage rails, a clock generator, and a power detector for detecting the power on VDD. Th...