ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,358, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Image sensor including silicon vertically stacked with germanium layer" was invented by Jhy-Jyi Sze (Hsin-Chu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip having a first image sensor element including a first doped region disposed within a substrate. The substrate comprises a first material and has a first surface opposite a second surface. A second image sensor element overlies the first image sensor element. The second image sensor element includ...