US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Flipped gate voltage reference circuit and method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,656,803, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Flipped gate voltage reference circuit and method" was invented by Mohammad Al-Shyoukh (Hsinchu, Taiwan) and Alex Kalnitsky (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A voltage reference includes a PMOS transistor including a gate and drain coupled to an input and a source coupled to a voltage node through a resistor, three PMOS transistors including gates coupled to the input and sources coupled to the voltage node through resistors, an n-type flipped-gate transistor including a gate and drain coupled to a PMOS transistor...