US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 16 for "Device structure having dielectric walls connected to a gate structure and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,294, issued on June 16, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Device structure having dielectric walls connected to a gate structure and method for manufacturing the same" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device structure includes a substrate, a fin structure disposed on the substrate and elongated in an X direction, a gate structure formed on the fin structure and elongated in a Y direction transverse to the X direction to terminate at two opposite ends, at least one dielectric portion connected to at least one of the two opposite ends of th...