US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Transistor device having a gate setback from a gate dielectric" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,455, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor device having a gate setback from a gate dielectric" was invented by Ta-Yuan Kung (New Taipei City, Taiwan), Chen-Liang Chu (Hsin-Chu, Taiwan), Chih-Wen Albert Yao (Hsinchu City, Taiwan), Fei-Yun Chen (Hinchu, Taiwan), Ming-Ta Lei (Hsin-Chu City, Taiwan), Ruey-Hsin Liu (Hsin-Chu, Taiwan) and Yu-Chang Jong (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated chip including a first source/drain region and a second source/drain region in a semiconductor substrate and laterally spaced apart along a top surface of...