US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "Semiconductor structure with blocking layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,437, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with blocking layer" was invented by Kun-Mu Li (Zhudong Township, Hsinchu County, Taiwan), Wei-Yang Lee (Taipei City, Taiwan) and Wen-Chu Hsiao (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure, and a source/drain structure in the fin structure and adjacent to the gate structure. The source/drain structure includes: a first epitaxial layer over the fin structure, a second epitaxial layer over...