US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "Method for forming semiconductor device structure with protection layer" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,433, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor device structure with protection layer" was invented by Kung-Pin Chang (Nantou Township, Nantou County, Taiwan), Yi-Ting Lin (Hsinchu City, Taiwan), Wen-Chiang Hong (Taipei City, Taiwan), Yao-Kwang Wu (Hsinchu, Taiwan) and Jyh-Huei Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes providing a substrate and a nanostructure stack. The method includes forming an isolation layer over the base and surrounding...