US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "Memory structure including a plurality of transistors connected to a storage element" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,421, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory structure including a plurality of transistors connected to a storage element" was invented by Hung-Li Chiang (Hsinchu, Taiwan), Jer-Fu Wang (Hsinchu, Taiwan), Yi-Tse Hung (Hsinchu, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan), Meng-Fan Chang (Hsinchu, Taiwan) and Hon-Sum Philip Wong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a substrate. The memory structure further includes a first transistor, wherein the first transistor is a first distance from the substrate. The memory structure further ...