US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "FinFET structure and method for manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,456, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"FinFET structure and method for manufacturing thereof" was invented by Chun Hsiung Tsai (Hsinchu County, Taiwan), Lai-Wan Chong (Kaohsiung City, Taiwan), Chien-Wei Lee (Hsinchu, Taiwan) and Kei-Wei Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Present disclosure provides a FinFET structure, including a substrate, a fin protruding from the substrate, including a first portion and a second portion below the first portion, the second portion includes a lighter-doped region and a heavier-doped region adjacent to the lighte...