ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,425, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"3D stackable memory and methods of manufacture" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chih-Yu Chang (New Taipei City, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Sai-Hooi Yeong (Zhubei City, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices and methods of forming the memory devices are disclosed herein. The memory devices include a resistive memory array including a first resistive memory cell, a staircase contact structure adjacent the resistive memory array, and an inter-metal dielectric...