US Patent Issued to Taiwan Semiconductor Manufacturing on July 28 for "Semiconductor structure having low-resistance via contact" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,759, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure having low-resistance via contact" was invented by Sheng-Kai Huang (Taichung, Taiwan) and Wei-Der Sun (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures having low resistance via contacts and methods of fabricating the same are provided. An example semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a resistor disposed in the dielectric layer, and a resistor via contact disposed in the dielectric layer the resistor. The resistor via contact furt...