ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,741, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Tzuan-Horng Liu (Longtan Township, Taiwan), An-Jhih Su (Taoyuan City, Taiwan) and Mill-Jer Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment is a method including a first dielectric layer over a first substrate, the first dielectric layer having a first metallization pattern therein. The method also includes forming a second dielectric layer over the first dielectric layer and the first metallization pattern. The method also includes forming a sacrificial pad over an...