US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Multi-metal fill with self-aligned patterning and dielectric with voids" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,744, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-metal fill with self-aligned patterning and dielectric with voids" was invented by Tai-I Yang (Hsinchu City, Taiwan), Wei-Chen Chu (Taichung City, Taiwan), Hsiang-Wei Liu (Tainan City, Taiwan), Shau-Lin Shue (Hsinchu, Taiwan), Li-Lin Su (Taichung County, Taiwan) and Yung-Hsu Wu (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with ...