US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,694,915, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device" was invented by Meng-Sheng Chang (Hsinchu County, Taiwan), Chia-En Huang (Hsinchu County, Taiwan), Yi-Ching Liu (Hsinchu City, Taiwan) and Yih Wang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of arrays coupled in parallel with each other. A first array of the plurality of arrays includes a first switch and a plurality of first memory cells that are arranged in a first column, a second switch and a plurality of second memory cells that are arranged in a second column, and ...