US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Interconnection structure and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,756, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Interconnection structure and method for fabricating the same" was invented by Kai-Fang Cheng (Hsinchu, Taiwan), Cherng-Shiaw Tsai (Hsinchu, Taiwan), Cheng-Chin Lee (Hsinchu, Taiwan), Yen-Ju Wu (Hsinchu, Taiwan) and Hsiao-Kang Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is...