ALEXANDRIA, Va., July 28 -- United States Patent no. 12,693,556, issued on July 28, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated photodetector with embedded semiconductor region" was invented by Tai-Chun Huang (New Taipei City, Taiwan) and Stefan Rusu (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure provides an optical module. A waveguide includes a rib, and further includes a first protrusion and a second protrusion respectively on opposite sides of the rib. Further, the waveguide is formed of a first semiconductor material. A photodetector is in the waveguide and comprises a PN junction in the rib. A ...