US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 28 for "Ferroelectric-based memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,456, issued on July 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric-based memory device and method of forming the same" was invented by Yi-Hsuan Chen (Taoyuan City, Taiwan), Kuen-Yi Chen (Hsinchu City, Taiwan), Yi Ching Ong (Hsinchu, Taiwan), Yu-Wei Ting (Taipei City, Taiwan), Kuo-Chi Tu (Hsin-Chu, Taiwan), Kuo-Ching Huang (Hsinchu City, Taiwan) and Harry-Hak-Lay Chuang (Zhubei city, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device according to the present disclosure includes forming a trench in a first substrate of a first wafer, depositing a data-storage...