US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 22 for "Semiconductor structure with gate-all-around devices and stacked FinFET devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,383, issued on July 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with gate-all-around devices and stacked FinFET devices" was invented by Feng-Ching Chu (Pingtung County, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit (IC) includes providing a structure having a fin over a substrate in a region of the IC, a sacrificial gate stack engaging a channel region of the fin, and gate spacers on sidewalls of the sacrificial gate stack. The first layers and the second...