US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Voltage reference circuit using field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,877, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Voltage reference circuit using field-effect transistors" was invented by Bei-Shing Lien (Hsinchu, Taiwan) and Szu-Lin Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit is provided, which includes a first temperature-sensitive device and a second temperature-sensitive device. The first temperature-sensitive device is configured to generate a reference voltage at an output terminal of the integrated circuit. The second temperature-sensitive device is coupled to the output terminal of the integrated circui...