US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 21 for "Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,688,881, issued on July 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Thyristor memory cell, thyristor memory array, and method for fabricating a thyristor memory array" was invented by Sheng-Chih Lai (Hsinchu, Taiwan) and Chen-Jun Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thyristor memory cell includes a semiconductor cathode, a first un-doped semiconductor feature connected to the semiconductor cathode, a second un-doped semiconductor feature connected to the first un-doped semiconductor feature, a semiconductor anode connected to the second un-doped semiconductor feature, and a gate...