US Patent Issued to Taiwan Semiconductor Manufacturing on July 21 for "Three dimensional heterogeneous integration with double-sided semiconductor dies and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,496, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three dimensional heterogeneous integration with double-sided semiconductor dies and methods of forming the same" was invented by Hiroki Noguchi (Hsinchu City, Taiwan) and Yih Wang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment semiconductor device may include a semiconductor die stack having a first semiconductor die including a first front-side interconnect structure and a first back-side interconnect structure, and a second semiconductor die including a second front-side interconnect structure and a second ba...