ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,191, issued on July 21, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"One-time-programmable memory devices and methods for forming the same" was invented by Yu-Der Chih (Hsinchu City, Taiwan), Ya-Chin King (Hsinchu City, Taiwan), Chrong Lin (Hsinchu City, Taiwan), Jonathan Tsung-Yung Chang (Hsinchu City, Taiwan), Yun-Sheng Chen (Hsinchu City, Taiwan), May-Be Chen (Hsinchu City, Taiwan) and Hsin-Yuan Yu (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is disclosed. The memory device includes a memory cell comprising: a transistor; and a plurality of pairs of resistors coupled to th...